Computing with Resistive Memory Technologies

作者: 分类: 学术报告 时间: 2015-12-31 评论: 暂无评论

题目:Computing with Resistive Memory Technologies
时间:12月31日10:30am
地点:G510

摘要:For decades, technology scaling has made it possible to design systems with faster processors and larger memory systems. As technology scales below the 14 nm node, however, conventional CMOS scaling is facing fundamental physical limits. With more than two billion transistors integrated on a single die, processor power dissipation now exhausts the capability of conventional cooling technologies. On the memory side, DRAM density scaling has become increasingly difficult due to the challenges in maintaining a sufficiently high storage capacitance and a sufficiently low leakage current at nanoscale feature sizes. In response, industry has started investing in emerging resistive memory technologies (e.g., STT-MRAM, PCM, and RRAM), which hold the potential to replace memories based on SRAM, DRAM, and Flash. This talk will examine our work on leveraging resistive memory technologies in designing energy-efficient microprocessor cores, and novel accelerators that enable computer systems with qualitatively new capabilities.

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Smart Sensors, Smart Homes and Smart Cities

作者: 分类: 学术报告 时间: 2015-12-31 评论: 暂无评论

时间:12月31日 9:30
地点:G510
报告主题:Smart Sensors, Smart Homes and Smart Cities
报告人:M. Jamal Dean, 加拿大皇家科学院院长,McMaster University杰出教授

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12月17日(周四)上午9:30

作者: 分类: 学术报告 时间: 2015-12-20 评论: 暂无评论

时间:12月17日(周四)上午9:30
地点:新主楼会议中心第二报告厅
主题:数据科学和人工智能
报告人:香港科技大学计算机科学与工程学系系主任杨强教授

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硕士开题答辩(刘老师组)

作者: 分类: 通知通告 时间: 2015-12-20 评论: 暂无评论

时间:12月15日上午9点
地点:G510
主题:刘老师组的硕士开题答辩

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